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May 1994
NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
36 and 32A, 80V. RDS(ON) = 0.042and 0.045. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
TC = 25C unless otherwise noted
NDP608A NDP608AE NDB608A NDB608AE 80 80 20 40 36 144 100 0.67
NDP608B NDP608BE NDB608B NDB608BE
Units V V V V
32 128
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP608.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 36 A
Type NDP608AE NDP608BE NDB608AE NDB608BE
Min
Typ
Max 200 36
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 18 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP608A NDP608AE NDB608A TJ = 125C NDB608AE NDP608B NDP608BE NDB608B TJ = 125C NDB608BE NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 18 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 36 2 1.4 2.9 2.3 0.031 0.05 80 250 1 100 -100 4 3.2 0.042 0.08 0.045 0.09 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 16 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
32
A
10
17.5 1370 390 140 1800 500 200
S pF pF pF
Ciss Coss Crss
NDP608.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 40 V, ID = 36 A, VGS = 10 V, RGEN = 7.5
Type ALL ALL ALL ALL
Min
Typ 11 113 37 69 46 8 25
Max 20 190 60 110 65
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 64 V, ID = 36 A, VGS = 10V
ALL ALL ALL NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 36 A
32
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE
144
A
128
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 18 A VGS = 0 V, IS = 36 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.91 0.81 88 6
1.3 1.2 125 9
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 C/W C/W
Notes: 1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP608.SAM
Typical Electrical Characteristics
120 2
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A)
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V GS = 6V 12 10
1.8 1.6 1.4 1.2 1 0.8 0.6
100
7.0 8.0
80
8.0
60
10 12 20
7.0
40
6.0
20
5.0
0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 6
0
20
40 60 80 I D , DRAIN CURRENT (A)
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.5
3.5
I D = 18A
DRAIN-SOURCE ON-RESISTANCE 2 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V
3 2.5 2 1.5
V GS = 10V
GS
= 10V
R DS(ON) , NORMALIZED
TJ = 125C
1.5
25C
1
1
-55C
0.5 0 0 20 40 60 I D , DRAIN CURRENT (A) 80 100
0.5 -50
-25
0
25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J
150
175
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
40 GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V DS = 10V
30
TJ = -55C
25 125
V DS = V
1.1 1 0.9 0.8 0.7 0.6 0.5 -50
GS
I D = 250A
I , DRAIN CURRENT (A)
20
10
D
0 2 3 V
GS
Vth , NORMALIZED
4
5
6
7
8
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 T , JUNCTION TEMPERATURE (C)
J
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP608.SAM
Typical Electrical Characteristics (continued)
105 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
100
I D = 250A
100
V GS = 0V
I , REVERSE DRAIN CURRENT (A) 10 5
BV DSS , NORMALIZED
TJ = 125C 25C -55C
95
1 0.5
90
85
0.1
80 -50
-25
0 TJ
25 50 75 100 125 , JUNCTION TEMPERATURE (C)
150
175
S
0.01 0.2
0.4 V
SD
0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20
3000 2000 , GATE-SOURCE VOLTAGE (V)
C iss
ID = 36A
15
V DS = 12V 64 24
1000 CAPACITANCE (pF)
C oss
300 200
10
C rss f = 1 MHz V GS = 0 V
1 2 VDS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50
5
100
V 0 0 20 40 Q g , GATE CHARGE (nC) 60 80
50
Figure 9. Capacitance Characteristics.
GS
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
VIN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP608.SAM
Typical Electrical Characteristics (continued)
30 , TRANSCONDUCTANCE (SIEMENS)
VDS = 10V
25
T J = -55C 25C
VGS = 10V
L tp
+ VDD -
20
15
125C
10
t p is adjusted to reach the desired peak inductive current, I L . tp IL
BV DSS
5
FS
VDD
g 0 0 10 20 30 ID , DRAIN CURRENT (A) 40 50
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
200 100
RD
I D , DRAIN CURRENT (A)
S
N (O
im )L
it
10 10 1m 10 10 ms
s
0
s
20 10 5
s
0m DC s
V GS = 20V
2 1 0.5 1 2 3 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 50 100
SINGLE PULSE T C = 25C
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R JC = 1.5 C/W
0.1
0.05 P(pk)
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (ms) 10 20 50 100 200 500 1000
0.02
0.05
Figure 16. Transient Thermal Response Curve.
NDP608.SAM

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